型号:

IRFL024NTRPBF

RoHS:无铅 / 符合
制造商:International Rectifier描述:MOSFET N-CH 55V 2.8A SOT223
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
IRFL024NTRPBF PDF
标准包装 1
系列 HEXFET®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 55V
电流 - 连续漏极(Id) @ 25° C 2.8A
开态Rds(最大)@ Id, Vgs @ 25° C 75 毫欧 @ 2.8A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 18.3nC @ 10V
输入电容 (Ciss) @ Vds 400pF @ 25V
功率 - 最大 1W
安装类型 表面贴装
封装/外壳 TO-261-4,TO-261AA
供应商设备封装 SOT-223
包装 标准包装
其它名称 IRFL024NTRPBFDKR
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